Evaluating depth distributions of dislocations in silicon wafers using micro-photoluminescence excitation spectroscopy

Effects of solar cell processing steps on dislocation luminescence in multicrystalline silicon

We examine the impacts of hydrogenation and phosphorus gettering steps on the deep-level photoluminescence spectra of dislocations and the surrounding regions in multicrystalline silicon wafers, using micro-photoluminescence spectroscopy with micron-scale spatial resolution. We found that the D1 line, originating from secondary defects around dislocation sites, was enhanced significantly after ...

Micro-spectroscopy on silicon wafers and solar cells

Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a po...

Surface characteristics and damage distributions of diamond wire sawn wafers for silicon solar cells

This paper describes surface characteristics, in terms of its morphology, roughness and near-surface damage of Si wafers cut by diamond wire sawing (DWS) of Si ingots under different cutting conditions. Diamond wire sawn Si wafers exhibit nearly-periodic surface features of different spatial wavelengths, which correspond to kinematics of various movements during wafering, such as ingot feed, wi...

Investigating dopant diffusion enhancement at grain boundaries in multicrystalline silicon wafers with micro-photoluminescence spectroscopy

Non-destructive evaluation methods for subsurface damage in silicon wafers: a literature review

The Subsurface Damage (SSD) in silicon wafers induced by any mechanical material-removal processes has to be removed by subsequent processes. Therefore, the measurement of SSD is critically important for cost-effective manufacturing of silicon wafers. This review paper presents several Non-Destructive Evaluation (NDE) methods for SSD in silicon wafers, including X-ray diffraction, micro-Raman s...